作者: Jun-ichi Hanna , Naoki Shibata , Kaichi Fukuda , Hirokazu Ohtoshi , Shunri Oda
DOI: 10.1007/978-1-4613-1841-5_48
关键词:
摘要: A novel method of preparing a-Si and its related materials from fluorides, i.e., Hydrogen Radical Enhanced CVD (HRCVD), is proposed. This based on control over the chemistry both in gas phase growing surface with aid hydrogen atoms.