Engineering electrodeposited ZnO films and their memristive switching performance

摘要: We report the influence of zinc oxide (ZnO) seed layers on performance ZnO-based memristive devices fabricated using an electrodeposition approach. The element is based a sandwich structure Ag and Pt electrodes. ZnO layer employed to tune morphology electrodeposited films in order increase grain boundary density as well construct highly ordered arrangements boundaries. Additionally, also assists optimizing concentration oxygen vacancies films. exhibit switching behaviour with symmetrical asymmetrical hysteresis loops absence presence layers, respectively. A modest vacancy arrangement boundaries leads higher ratios Ag/ZnO/Pt devices.