Lithography-free fabrication of graphene devices
作者： C. Puls , N. Staley , T. N. Jackson , H. Wang , Y. Liu
DOI: 10.1063/1.2719607
关键词:
摘要: We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as shadow mask. This technique, which is free of the possible contamination during lithographic process, simple to implement, versatile, and capable achieving high throughput. prepared electrical transport well planar tunnel junction studies n-layer (nLG), with n=1,2,3, higher this technique. observed weak localization behavior apparent reduction density states near Fermi energy in nLG.
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