Electrically programmable non-volatile memory having sequentially deactivated write circuits

摘要: An electrically programmable non-volatile memory includes a matrix of cells accessible by rows and columns, write read circuits which apply potentials, representing the programmed datum or command, to columns. The also device controls interconnection with cells, wherein N are simultaneously, being greater than 1, each cell setting up current surge when it is at "1". for deactivating, one one, corresponding where there change-over from programming mode mode, structure short-circuit deactivation mode.