40 GHz, low half-wave voltage Ti:LiNbO/sub 3/ intensity modulator
作者： G.K. Gopalakrishnan , C.H. Bulmer , W.K. Burns , R.W. McElhanon , A.S. Greenblatt
DOI: 10.1049/EL:19920522
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摘要: A 5 V half-wave voltage (V/sub pi /) electro-optic Ti:LiNbO/sub 3/ intensity modulator with a -7.5 dB (electrical) optical response at 40 GHz is demonstrated 1.3 mu m. thick electrode structure used in conjunction thin substrate to achieve near optical-microwave phase match and broadband electrical response. >
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sci-hub.se 参考文章(2)
S. K. Korotky, G. Eisenstein, R. S. Tucker, J. J. Veselka, G. Raybon, Optical intensity modulation to 40 GHz using a waveguide electro‐optic switch Applied Physics Letters. ,vol. 50, pp. 1631- 1633 ,(1987) , 10.1063/1.97750
G.K. Gopalakrishnan, W.K. Burns, C.H. Bulmer, Electrical loss mechanisms in travelling wave LiNbO/sub 3/ optical modulators Electronics Letters. ,vol. 28, pp. 207- 209 ,(1992) , 10.1049/EL:19920129