Continuous-wave laser annealing of metallic layers for CuInSe2 solar cell applications: effect of preheating treatment on grain growth

摘要: Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu–In–Se thin films as precursors CuInSe2 absorber layers via annealing. The reaction mechanism annealed metal stacks is revealed by measuring ex situ X-ray diffractograms, Raman spectra composition. It shown that the formation occurs CuxSe/InxSey binary phases in conventional routes, despite entirely different time scale. Pre-alloying Cu In metals prior to significantly enhances selenisation rate. Laser six seconds approaches near phase-pure material, which exhibits similar crystalline quality reference material ninety minutes tube furnace. estimated quasi Fermi level splitting deficit only 60 meV lower than sample, implies high optoelectronic quality.