In situ high-temperature scanning tunneling microscopy studies of two-dimensional TiN island coarsening kinetics on TiN (0 0 1)

摘要: Abstract In situ high-temperature (1023–1223 K) scanning tunneling microscopy was used to study the coarsening/decay kinetics of two-dimensional (2D) TiN adatom islands on TiN(0 0 1) terraces and in single-atom-deep vacancy pits. Island behavior found be non-linear with time depend local environment (i.e., concentration gradients terrace), signature surface-diffusion-limited kinetics. Two simple island geometries––a single 2D an atomically smooth terrace a within island––were extract surface transport parameters. We model diffusion-limited decay for these configurations based upon steady-state diffusion equations solved by adaptive finite-element methods form Gibbs–Thomson equation describing anisotropic serving as boundary condition. Calculated rates were compared experimental results obtain activation energy Ea formation TiN(0 0 1). 2.6±0.6 3.1±0.5 eV pits terraces, respectively. The difference two values corresponds step edge Ehrlich barrier, which is less than uncertainties measurements.