作者: Gobind Das , Paolo Bettotti , Luigi Ferraioli , Rishi Raj , Gino Mariotto
DOI: 10.1016/J.VIBSPEC.2007.07.001
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摘要: Abstract Silicon oxycarbide samples were prepared by polymer pyrolysis using a methyltriethoxysilane-derived precursor. Transparent crack-free gel obtained from the alkoxide sol–gel process. The dried pyrolysed at different temperatures in range between 400 and 1500 °C Ar atmosphere. chemical microstructural evolution during followed FT-IR absorption, Raman scattering photoluminescence (PL). spectra show change Si–O–Si asymmetric stretching, C–H x , Si–CH 3 stretching vibrational bands. peak position shape of these bands found stable up to 600 °C. Above this temperature, remarkable related vibration, reduction absorption have been observed. Degradation simultaneous formation 2 –Si via –CH is explicitly observed, experimentally. Annealing sample 800 °C starts clear presence D G bands, free carbon precipitation its segregation with temperature. broad PL centered around 670 nm for shows an important information regarding crystalline SiC.