Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference.

摘要: We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and dry transfer method on lift-off-resist-coated substrates to facilitate nanoelectronic devices technological applications. It encompasses the demands scalable as well ultra-fast response due weak coupling environment. The fabricated exhibited initially field-effect with substantial positive (p) doping which transformed into negative (n) upon current annealing at temperature of 4 K. With increased current, n-doping gradually decreased while Dirac peak position approached zero in gate voltage. An ultra-low residual charge density 9 × 108 cm-2 mobility 1.9 × 105 cm2 V-1 s-1 were observed. Our samples display clear Fabry-Perot (FP) conductance oscillation indicates ballistic electron transport. spacings FP oscillations are found depend manner that agrees theoretical modeling based Klein tunneling particles. charge, dependent period, high prove excellent quality our devices. Owing its simplicity, scalability robustness, this enhances possibilities production suspended, high-quality, two-dimensional-material novel electronic