Non-volatile memory devices and methods of operating the same
作者： Jung-Dal Choi , Chang-Hyun Lee
DOI:
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摘要: Example embodiment non-volatile memory devices may be capable of increased integration and reliability provide example methods operating devices. include a first control gate electrode on semiconductor substrate. A charge storing layer between the substrate electrode. source region defined in at one side auxiliary other recessed into drain opposite to bit line connected region.
google.co.in 参考文章(94)
Carlos A. Paz de Araujo, Koji Arita, Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material ,(1999)
Fuh-Cheng Jong, Kent Chang, EEPROM memory cell with high radiation resistance ,(2002)
Heon Lee, Youngjin Park, Method for fabrication of enlarged stacked capacitors using isotropic etching ,(1999)
Craig T. Swift, Michael Sadd, Bruce E. White, Multi-bit non-volatile memory device and method therefor ,(2004)
Nguyen Duc Bui, Method of forming a composite interpoly gate dielectric ,(2000)
John M. Caywood, Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell ,(2000)
Leonard Forbes, Static NVRAM with ultra thin tunnel oxides ,(2000)
Jung-Dal Choi, Byoung-Woo Ye, Chang-Hyun Lee, Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers ,(2002)
Leonard Forbes, Joseph E. Geusic, Operating a memory device ,(2004)
Atsushi Azuma, Kazuya Ohuchi, Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same ,(1999)