Control of Charge Transports in Nonvolatile Resistive Memory Devices through Embedded Nanoscale Layers
作者： Yil-Hwan You , Jin-Ha Hwang
DOI: 10.4191/KCERS.2009.46.3.336
关键词:
摘要: Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The phenomena involve low and high resistance states after electroforming. electrical features are believed to be associated with formation rupture filaments. set reset behaviors controlled by oxidation reduction indirect evidence filaments is corroborated presence nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. insertion insulating layers seems control current-voltage characteristics preventing continuous conductive filaments, potentially leading artificial NiO-based systems.
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