作者: Sangwoo Park , Taehwan Jeong , Hyunmin Kang , Seong Jun Jung , Jae Hyun Lee
DOI: 10.3938/JKPS.74.241
关键词:
摘要: The interface states at the graphene-dielectric substrate are scientifically and industrially important to control electronic properties for graphene-based applications. In this report, we present atomic structures of graphene on Ge(110), studied by scanning tunneling microscopy spectroscopy (STM/STS) in an scale. We observed Ge pentamers ridge structures. strong electric coupling existence were confirmed additional peaks −0.55 V −0.20 dI/dV spectra. Based analysis energy gap mappings near ridges graphene, extracted from two-dimensional STS measurements, could tell effects strain interfacial distance graphene/Ge(110).