Bulk Growth of Crystals of III–V Compound Semiconductors

摘要: Semiconducting materials that are synthesized by mixing elements from the groups IIIa and Va of periodic table known as III–V compound semiconductors. These compounds could be binary, ternary, quaternary, pentenary, or higher orders depending on number elemental species used for synthesizing compounds. have found widespread applications in electronic, optoelectronic, photovoltaic devices. In majority applications, binary substrate material onto which ternary quaternary epitaxially grown thin layers fabricating device structures. The form bulk single crystals high-temperature melts. With substrates, only a handful lattice parameters band gaps possible, thus limiting designs architectures. Ternary substrates provide variable constants necessary advancing next generation research development. However, technology is still its early stages with limited availability niche applications. This chapter presents an overview technologies established growing high-quality ongoing development crystal growth technologies. Infrastructure needed overcoming challenges during large diameter compositionally homogeneous semiconductors will discussed. focuses (AlGaIn)–(PAsSb)-based salient features preparation methodologies been summarized.