作者: Ankush Bag , Rahul Kumar , Partha Mukhopadhyay , Mihir K. Mahata , Apurba Chakraborty
DOI: 10.1007/S13391-015-5129-3
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摘要: In-situ RHEED and ex-situ AFM characterizations have been employed to investigate transformations of surface topography with the thickness PAMBE grown AlGaN InGaN on GaN. The ternary alloys identical growth-front roughness as confirmed by XRR observations. spottier has observed increased opposed streakier behavior AlGaN. We noticed incremental nature RMS roughness, skewness kurtosis compared GaN or from evident final spotty for InGaN. However, analyzed fractal dimension is lower (DfAlGaN>DfGaN>DfInGaN). From kinetic roughening perspective adatoms, experimental evidences lead high correlation between binding energy cluster atoms (EbAlN>EbGaN>EbInN) modified DDA growth model dissociation evaporation confirm efficacy study. initial streaky AlGaN, respectively, can be attributed their Eb that causes smoothing due adatoms mobility behavior. Therefore, description reveals fact during formation nitride hetero-interface while other results describe top surface. Open image in new window