Isolation structure using liquid phase oxide deposition

摘要: A shallow trench isolation structure is formed by a process having reduced number of steps and thermal budget filling trenches liquid phase deposition an insulating semiconductor oxide heat treating the deposit to form layer high quality at interface between deposited body material (e.g. substrate) into which extends. This yields with stress tendency develop charge leakage. The can be readily easily planarized, particularly if polish-stop applied over voids contamination are substantially eliminated self-aligned above in volume apertures on resist used trench.