摘要: … Since the ion drift process occurs on a microscale, measured … to the measurement of small diffusion rates. The process is … the large E the concentration gradient of N D in this diffusion …
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sci-hub.se 参考文章(10)
Nevill Francis Mott, Ronald Wilfrid Gurney, Electronic Processes in Ionic Crystals ,(1940)
Gerhard Backenstoss, Conductivity Mobilities of Electrons and Holes in Heavily Doped Silicon Physical Review. ,vol. 108, pp. 1416- 1419 ,(1957) , 10.1103/PHYSREV.108.1416
M. B. Prince, Drift Mobilities in Semiconductors. II. Silicon Physical Review. ,vol. 93, pp. 1204- 1206 ,(1954) , 10.1103/PHYSREV.93.1204
C. S. Fuller, J. C. Severiens, Mobility of Impurity Ions in Germanium and Silicon Physical Review. ,vol. 96, pp. 21- 24 ,(1953) , 10.1103/PHYSREV.96.21
Howard Reiss, C. S. Fuller, F. J. Morin, Chemical Interactions Among Defects in Germanium and Silicon Bell System Technical Journal. ,vol. 35, pp. 535- 636 ,(1956) , 10.1002/J.1538-7305.1956.TB02393.X
W. Kaiser, P. H. Keck, Oxygen Content of Silicon Single Crystals Journal of Applied Physics. ,vol. 28, pp. 882- 887 ,(1957) , 10.1063/1.1722880
J.P. Maita, Ion pairing in Silicon Journal of Physics and Chemistry of Solids. ,vol. 4, pp. 68- 70 ,(1958) , 10.1016/0022-3697(58)90195-1
A. Rose, Space-Charge-Limited Currents in Solids Physical Review. ,vol. 97, pp. 1538- 1544 ,(1955) , 10.1103/PHYSREV.97.1538
F. J. Morin, J. P. Maita, Electrical Properties of Silicon Containing Arsenic and Boron Physical Review. ,vol. 96, pp. 28- 35 ,(1954) , 10.1103/PHYSREV.96.28
J. M. Early, P-N-I-P and N-P-I-N Junction Transistor Triodes Bell System Technical Journal. ,vol. 33, pp. 517- 533 ,(1954) , 10.1002/J.1538-7305.1954.TB02355.X