Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10 −10 Ω-cm 2

摘要: Ga and Sn surface-segregated p+-GeSn (Seg. p+-GeSn) was grown by molecular beam epitaxy (MBE) to achieve an average active doping concentration of 3.4×1020 cm−3 surface composition more than 8%. This enables the realization record-low specific contact resistivity ρ c down 4.4×10−10 Ω-cm2. The extracted from 14 sets Ti/Seg. Nano-TLM test structures, a collection 90 devices is 6.5×10−10 also lowest for non-laser-annealed contacts. Ti contacts films with without segregation were fabricated. It shown that at Ti/p+-GeSn interface leads 50% reduction in as compared sample segregation.