Impacts of postannealing ambient atmospheres on Pt/SrBi 2.2 Ta 2 O 9 /Pt capacitors
作者： Ai-Dong Li , Tao Yu , Hui-Qin Ling , Di Wu , Zhi-Guo Liu
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摘要: SrBi2Ta2O9 (SBT) films were prepared on Pt/TiO2/SiO2/Si substrates at 750 °C in oxygen by the metalorganic decomposition method. SBT film capacitors postannealed Ar (N2) 350–750 and then reannealed O2 °C. Effects of annealing atmosphere structure, morphology, ferroelectric properties have been investigated systematically. The composition analyses indicate Ar- or N2-annealing leads to Bi evaporation loss. Above 550 100% N2 postannealing, remnant polarization decreases coercive field increases significantly. subsequent recovery can hardly rejuvenate electrical properties. result is different from that with effective forming gas processing (annealing an containing 5% hydrogen). possible origin mechanism discussed proposed.
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