ANALYZING THE EFFECTS OF LATERALLY VARYING EMITTER SHEET RESISTANCE IN COMBINATION WITH CONTACT RESISTANCE

摘要: In this work the effect of a laterally varying emitter sheet resistance on IV characteristic parameters is analyzed for an industrial like solar cell structure by distributed circuit simulations. The influence contact considered experimentally determined dependence screen printed contacts shallow emitters with high surface doping concentration. Production cells flaws in distribution as distinguished from e.g. structures selective are analyzed. these cases efficiency inhomogeneous decreased compared to one homogeneous mean value distribution. Nevertheless inhomogeneity +/-20% 20% area decrease less than 0.15% relative case moderate between and resistance. Hence influences primarily its formation during firing step. Further effects negligible.