Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
作者： Jongwook JEON , Ickhyun SONG , Jong Duk LEE , Byung-Gook PARK , Hyungcheol SHIN
DOI: 10.1587/TRANSELE.E92.C.627
关键词:
摘要: In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on analysis of relationship among different effects such as velocity saturation effect (VSE), channel-length modulation (CLM), carrier heating (CHE), was analytically derived simple form. order simulate MOSFET's characteristics in simulators, an appropriate methodology proposed. The used verified by comparing simulated results measured data at device level using 65nm 130nm CMOS technologies, respectively.
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