Implantation of xenon in amorphous carbon and silicon for brachytherapy application
作者： F.C. Marques , P.F. Barbieri , G.A. Viana , D.S. da Silva
DOI: 10.1016/J.APSUSC.2013.01.054
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摘要: Abstract We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and silicon, a-Si, for application brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used the films, where one gun sputtering carbon (or silicon) target, while other simultaneously bombard growing film with Xe + 0–300 eV range. were implanted into concentration up 5.5 at.%, obtained bombardment energy 50–150 eV X-ray absorption spectroscopy investigate local arrangement through L III edge (4.75 keV). It observed that tend agglomerate nanoclusters a-C are dispersed a-Si.
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