High-ĸ dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cells
作者： Muhammad Fahad Bhopal , Kamran Akbar , Malik Abdul Rehman , Doo won Lee , Atteq ur Rehman
DOI: 10.1016/J.CARBON.2017.09.038
关键词:
摘要: Abstract In recent years, graphene (Gr) based solar cells have attracted extensive interest because of their ability to produce low cost and highly efficient cells. Conventional Gr/Si Schottky junction are mostly fabricated by transfer on silicon substrate. current work the direct growth using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique was demonstrated make fabrication more practical a large scale. Firstly were fabricated, optimizing process, power conversion efficiency (PCE) about 3.5% achieved. Additionally, we metal insulator semiconductor (MIS) structure introducing hafnium oxide (HfO2), an enriched 6.68% reached. Furthermore, chemical doping Gr grown top HfO2 passivated Si done further enhanced 8.5%. This study also suggests that Voc Gr/HfO2/Si strongly depends thickness interfacial layer. These proved reliable as still consistent even after four months. The envisions use for commercial application.
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