Analysis and simulation of semiconductor devices

摘要: 1. Introduction.- 1.1 The Goal of Modeling.- 1.2 History Numerical Device 1.3 References.- 2. Some Fundamental Properties.- 2.1 Poisson's Equation.- 2.2 Continuity Equations.- 2.3 Carrier Transport 2.4 Concentrations.- 2.5 Heat Flow 2.6 Basic Semiconductor 2.7 3. Proeess 3.1 Ion Implantation.- 3.2 Diffusion.- 3.3 Oxidation.- 3.4 4. Physical Parameters.- 4.1 Mobility 4.2 Generation-Recombination 4.3 Thermal Conductivity 4.4 Generation 4.5 5. Analytical Investigations About the 5.1 Domain and Boundary Conditions.- 5.2 Dependent Variables.- 5.3 Existence Solutions.- 5.4 Uniqueness or Non-Uniqueness 5.5 Sealing.- 5.6 Singular Perturbation Approach.- 5.7 Referenees.- 6. Diseretization 6.1 Finite Differences.- 6.2 Boxes.- 6.3 Elements.- 6.4 Transient Problem.- 6.5 Designing a Mesh.- 6.6 7. Solution Systems Nonlinear Algebraic 7.1 Newton's Method Extensions.- 7.2 Iterative Methods.- 7.3 8. Sparse Linear 8.1 Direct 8.2 Ordering 8.3 Relaxation 8.4 Alternating Direction 8.5 Strongly Implicit 8.6 Convergence Acceleration 8.7 9. A Glimpse on Results.- 9.1 Breakdown Phenomena in MOSFET's.- 9.2 Rate Effect Thyristors.- 9.3 Author Index.- Table Index.