作者: V.G. Bhide , K.G. Deshmukh , M.S. Hegde
DOI: 10.1016/0031-8914(62)90075-7
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摘要: Abstract A new method for growing single crystals of ferroelectric PbTiO3 is described. mixture TiO2, Pb3O4 and KF in the ratio 1 : 2.5 6.5 taken a platinum crucible heated to temperature about 900°C 950°C 20 hours. The melt then slowly cooled room temperature. Flat plates are grown by this method. dielectric properties these studied range 0–600°C. Curie has been found be 495°C with constant order 1.1 X 105. conductivity samples shows an anomalous variation at near