Chapter 5 One-and Two-Photon Magneto-Optical Spectroscopy of InSb and Hg1–xCdxTe

作者: David G. Seiler , Chris L. Littler , Margaret H. Weiler

DOI: 10.1016/S0080-8784(08)62902-6

关键词:

摘要: Publisher Summary This chapter discusses the one- and two-photon magneto-optical spectroscopy of InSb Hg 1-x Cd x Te. Spectroscopy is a very important area science because most knowledge about structure atoms, molecules, various states matter based on some sort spectroscopic investigation. Magneto-optical valuable powerful means for characterizing understanding semiconductors. For example, studies have been carried out to investigate features properties semiconductors, such as conduction or valence bands, excitonic levels, impurity defect density electronic states, carrier lifetimes, band symmetries, effective masses, effects anisotropy. In addition, magneto-optics has successfully used study influence externally controlled parameters, temperature, pressure, electric magnetic fields. Narrow-gap semiconductors (NGSs) long recognized their special characteristics that give rise not only physical can be studied but also useful technological applications.

参考文章(252)
Van-Tran Nguyen, A. R. Strnad, Y. Yafet, Perturbation Theory and Two-Photon Magnetoabsorption in Semiconductors Physical Review Letters. ,vol. 26, pp. 1170- 1173 ,(1971) , 10.1103/PHYSREVLETT.26.1170
W. Jantsch, K. Wünstel, O. Kumagai, P. Vogl, Deep levels in semiconductors: A quantitative criterion Physical Review B. ,vol. 25, pp. 5515- 5518 ,(1982) , 10.1103/PHYSREVB.25.5515
Z. Kučera, P. Hlidek, P. Höschl, V. Koubele, V. Prosser, M. Zvára, Magneto-Optical Spectroscopy of p-Type Hg0.8Cd0.2Te physica status solidi (b). ,vol. 158, pp. K173- K178 ,(1990) , 10.1002/PSSB.2221580253
D. G. Seiler, S. W. McClure, R. J. Justice, M. R. Loloee, D. A. Nelson, Nonlinear optical determination of the energy gap of Hg1−xCdxTe using two‐photon absorption techniques Applied Physics Letters. ,vol. 48, pp. 1159- 1161 ,(1986) , 10.1063/1.96456
J. Camassel, D. Auvergne, TEMPERATURE DEPENDENCE OF THE FUNDAMENTAL EDGE OF GERMANIUM AND ZINC BLENDE-TYPE SEMICONDUCTORS Physical Review B. ,vol. 12, pp. 3258- 3267 ,(1975) , 10.1103/PHYSREVB.12.3258
C.T. Elliott, I. Melngailis, T.C. Harman, A.G. Foyt, Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTe Journal of Physics and Chemistry of Solids. ,vol. 33, pp. 1527- IN3 ,(1972) , 10.1016/S0022-3697(72)80446-3
R. G. Pratt, J. Hewett, P. Capper, C. L. Jones, N. Judd, Minority‐carrier lifetime in doped and undoped n‐type CdxHg1−xTe Journal of Applied Physics. ,vol. 60, pp. 2377- 2385 ,(1986) , 10.1063/1.337149
Colin E. Jones, Vijayan Nair, Dennis L. Polla, Generation‐recombination centers inp‐type Hg1−xCdxTe Applied Physics Letters. ,vol. 39, pp. 248- 250 ,(1981) , 10.1063/1.92702
S. Huant, L.C. Brunel, M. Baj, L. Dmowski, N. Coron, G. Dambier, New impurity related transitions in n-InSb Solid State Communications. ,vol. 54, pp. 131- 133 ,(1985) , 10.1016/0038-1098(85)91136-6
G.E. Stillman, C.M. Wolfe, J.O. Dimmock, Magnetospectroscopy of shallow donors in GaAs Solid State Communications. ,vol. 7, pp. 921- 925 ,(1969) , 10.1016/0038-1098(69)90543-2