Fabrication of Ultraviolet Photodetectors Based on Fe-Doped ZnO Nanorod Structures.
作者： Yen-Lin Chu , Sheng-Joue Young , Liang-Wen Ji , I-Tseng Tang , Tung-Te Chu
DOI: 10.3390/S20143861
关键词:
摘要: In this paper, 100 nm-thick zinc oxide (ZnO) films were deposited as a seed layer on Corning glass substrates via radio frequency (RF) magnetron sputtering technique, and vertical well-aligned Fe-doped ZnO (FZO) nanorod (NR) arrays then grown the layer-coated low-temperature solution method. FZO NR annealed at 600 °C characterized by using field emission scanning microscopy (FE-SEM) X-ray diffraction spectrum (XRD) analysis. NRs grew along preferred (002) orientation with good crystal quality hexagonal wurtzite structure. The main ultraviolet (UV) peak of 378 nm exhibited red-shifted phenomenon Fe-doping photoluminescence (PL) emission. Furthermore, photodetectors (PDs) based metal-semiconductor-metal (MSM) structure successfully manufactured through photolithography procedure for UV detection. Results revealed that compared pure NRs, remarkable photosensitivity PD applications fast rise/decay time. sensitivities prepared PDs 43.1, 471.1 3 V applied bias 380 illumination, respectively.
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