摘要: Nonlinear optical properties of SiO/sub 2/ layers are very interesting for applications in integrated electro-optical devices. Previous experiments, mostly performed on multilayer structures, show that nonlinear effects exist after application a high electric field. In the present experiment single layer was prepared by thermal oxidation silicon substrate. A transparent electrode deposited top layer. Electron-beam charging used to generate effects. reflection technique which utilizes propagation polarized laser beam through ac-biased sample measuring coefficient: Due effect investigated layer, plane polarization beam, is partially reflected at Si-SiO/sub interface, oscillates compared input beam. The observed coefficient r/sub 33/ approximately 1.5 pm/V /spl lambda/=780nm and higher than previously measured coefficients 2/. shows no decay room temperature over period several days.
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