High-power high-efficiency 660-nm laser diodes for DVD-R/RW
作者： T. Yagi , H. Nishiguchi , Y. Yoshida , M. Miyashita , M. Sasaki
DOI: 10.1109/JSTQE.2003.819514
关键词:
摘要: A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat …
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