Block oriented random access memory

摘要: A block oriented random access memory (BORAM) is disclosed as comprising a plurality of arrays metal-nitride-oxide semiconductor (MNOS) elements. Each array includes the MNOS elements disposed in rows and columns, serial or sequential means such shift register for writing reading data to from through column conductors associated with each temporary storage latch inserted between stage conductor, whereby multiplexing function can be performed outputs columns Address provided elements, row may selected entry its conductor. In one illustrative embodiment, assemblies assembled into capable being separately addressed, wherein assembly storing bit multi-bit word data. turn, blocks form memory, randomly accessed, therein sequentially read written.