Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky‐Barrier Diodes
作者： A. M. Cowley
DOI: 10.1063/1.1703157
关键词:
摘要: The diffusion potential VBO and the intercept V0 of 1/C2 vs bias plots for n‐type GaP‐metal Schottky‐Barrier diodes have been measured. Photoresponse measurements indicate that is not sensitive to thickness δ interfacial separation between GaP metal; observed increase rapidly with δ. are linear in all cases, slopes independent V0. values donor density ND, calculated usual way from plots, seem agree within experimental error ND resistivity GaP.Several models proposed metal‐interfacial‐layer‐semiconductor system order explain this behavior. shown be best characterized by a model which includes bias‐dependent charge surface states at semiconductor surface.
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