Mechanical properties of SiC nanowires determined by scanning electron and field emission microscopies

摘要: We present here comparative measurements by scanning electron microscopy (SEM) and field emission (FE) of the mechanical resonances singly clamped, batch-fabricated SiC nanowires as well an extensive theoretical description. The six nanowires, which were glued to ends tungsten support tips, electrostatically excited detected visually in SEM configuration then FE image processing. large tensions generated electric pulling that tune resonance frequencies complex boundary conditions at both free clamped nanowire complicate interpretation necessary for extracting intrinsic parameters. Our model fully takes into account these effects results excellent agreement with measured modes configurations. Analytical solutions their validity are given low high tension ranges semianalytical intermediary range. Viable estimates Young's modulus thus achieved ultra vacuum (UHV) environment FE. Progressive situ cleaning was performed FE-UHV range $600--1350\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, increased $Q$ factor first up $\ifmmode\times\else\texttimes\fi{}100$ did not alter value previously configuration. between techniques means we can now profit from different strengths better understanding mechanics nanotubes.