Capacitance anomaly near the metal—non-metal transition in Cr—hydrogenated amorphous Si—V thin-film devices
作者： J. Hu , J. Hajto , A. J. Snell , A. E. Owen , M. J. Rose
DOI: 10.1080/01418639608240326
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摘要: … filament capacitance and show that the increase in capacitance … Near the MNM transition, the effective dielectric constant … 1260 impedance analyser (ac) over a frequency range from 1 …
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