Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge
作者： I. Beinik , B. Galiana , M. Kratzer , C. Teichert , I. Rey-Stolle
DOI: 10.1116/1.3454373
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摘要: In this work the authors present an electrical characterization of so called arrowhead defects (ADs) in GaInP thin films grown on Ge(100) substrates misoriented by 6° toward (111). The samples have been evaluated means conductive atomic force microscopy (C-AFM) and Kelvin probe (KPFM). It is shown that ADs terminating planes which are composed from two alternating subplanes inclined 12° (close to {105} plane) {109}) with respect (100) plane. possess higher conductivity compared their surrounding. differ also behavior each other, demonstrating different values bucking voltages difference current densities between was found be ∼170±35 μA/m2 at −3 V, ∼70 mV 5 V excitation signal lift mode. suggested ...
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