Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts

摘要: We demonstrate a method to improve the light extraction from an LED using photonic crystal (PhC)-like structures in metal contacts. A patterned contact with array of Silicon Oxide (SiOx) pillars (440 nm size) on InGaN/GaN-based MQW has shown increase output illumination uniformity through experimental characterization. Structural methods improving transparent contacts or dielectric crystals typically require tradeoff between and optimal electrical characteristics. The presented here provides alternate solution provide 15% directional improvement (surface normal) radiation profile ~ 30% respective intensity without affecting characteristics device. Electron beam patterning hydrogen silesquioxane (HSQ), novel electron resist is used these After patterning, thermal curing done form SiOx pillars. These aid as mask for transferring pattern p-metal contact. Electrical optical characterization results LEDs fabricated are presented. present profiles planar devices extracted Matlab-based image analysis technique 200 μm (diameter) circular unpackaged LEDs.