Thermal sensors based on p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Se0.2Te0.8 thin films grown using thermal evaporation method
作者： A. Hmood , A. Kadhim , H. Abu Hassan
DOI: 10.1016/J.MEASUREMENT.2013.04.062
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摘要: Abstract We utilize p -Pb 0.925 Yb 0.075 Te:Te and n Se 0.2 Te 0.8 ingots in a standard solid-state microwave synthesis route to fabricate thermally evaporated thin films. The nanostructure composition of the films were studied through X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDX). Seebeck coefficient electrical conductivity measured at temperature range 298–523 K. micro-thermoelectric devices composed 20 pairs 10 on glass substrates, respectively. dimensions thermoelectric generators which comprised 10-pair 12 mm × 10 mm, whereas, 20-pair 23 mm × 20 mm, respectively legs connected aluminum electrodes. serial – thermocouples generated maximum output open-circuit voltage 275.3 mV power 54.37 nW difference Δ T = 162 K; values are 109.4 mV 16.68 nW = 162 K for thermocouples,
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