Metal‐dopant‐compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance
作者： V. Probst , H. Schaber , A. Mitwalsky , H. Kabza , B. Hoffmann
DOI: 10.1063/1.349625
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摘要: The refractory metal disilicides TiSi2 and TaSi2 were investigated for their usefulness as dopant diffusion sources. During furnace annealing rapid thermal processing, strong decomposition reactions occur between the dopants D (B or As) respective silicide (MSi2) to form MxDy compounds. With help of special sample preparation methods various analytical techniques, compound phases TiB2, TiAs, TaB2, TaAs unambiguously detected. fraction freely diffusing B in is determined be below 5% total dose; by far, major part bound within TaB2 phase Careful analysis secondary‐ion‐mass spectrometry profiles necessary avoid artifacts caused these particles. MxDy‐compound formation has detrimental consequences: solubility arsenic even more boron limited rather low‐concentration levels (e.g., TaSi2: 4 × 1018 B/cm3 < CB(900 °C) 1.6 1019 B/c...
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