1.3 μm photoluminescence from InGaAs quantum dots on GaAs

摘要: We use molecular beam epitaxy to grown coherently strained InGaAs islands on (100) GaAs substrates. The show room‐temperature photoluminescence at 1.3 μm with a full width half‐maximum of only 28 meV. integrated intensity is comparable that quantum well. are formed by depositing 22 monolayers In0.3Ga0.7As alternating beams In, Ga, and As2. Atomic force microscopy measurements the ellipsoidal sections an average peak height 24 nm. intersection plane ellipse whose major axis along [011] has mean length 54 nm, minor 36 form dense array areal coverage about 40%.