Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO
作者： Ji-Myon Lee , Kyoung-Kook Kim , Seong-Ju Park , Won-Kook Choi
DOI: 10.1063/1.1379061
关键词:
摘要: Low-resistance and nonalloyed ohmic contacts to epitaxially grown n-ZnO were formed by exposing an inductively coupled hydrogen argon plasma. Using Ti/Au, the specific contact resistivity of was drastically decreased from 7.3×10−3 4.3×10−5 Ω cm2 plasma treatment. The photoluminescence spectrum treated ZnO showed a large enhancement in band-edge emission strong suppression deep-level emission. These results suggest that low can be attributed increase carrier concentration on surface. Ar-plasma sample also 5.0×10−4 Ω cm2, presumably due formation shallow donor surface ion bombardment.
scitation.org
harvard.edu
aip.org 
researchgate.net 
sci-hub.se 参考文章(25)
Kyoung-Kook Kim, Jae-Hoon Song, Hyung-Jin Jung, Won-Kook Choi, Seong-Ju Park, Jong-Han Song, The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering Journal of Applied Physics. ,vol. 87, pp. 3573- 3575 ,(2000) , 10.1063/1.372383
Hiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita, Masahiro Hirano, Nobuhiko Sarukura, Hideo Hosono, None, Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO Applied Physics Letters. ,vol. 77, pp. 475- 477 ,(2000) , 10.1063/1.127015
David W. Jenkins, John D. Dow, Electronic structures and doping of InN,InxGa1−xN, andInxAl1−xN Physical Review B. ,vol. 39, pp. 3317- 3329 ,(1989) , 10.1103/PHYSREVB.39.3317
X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, J. M. Van Hove, Depth and thermal stability of dry etch damage in GaN Schottky diodes Applied Physics Letters. ,vol. 75, pp. 232- 234 ,(1999) , 10.1063/1.124332
Han-Ki Kim, Sang-Heon Han, Tae-Yeon Seong, Won-Kook Choi, Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers Applied Physics Letters. ,vol. 77, pp. 1647- 1649 ,(2000) , 10.1063/1.1308527
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
Yow-Jon Lin, Ching-Ting Lee, Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN Applied Physics Letters. ,vol. 77, pp. 3986- 3988 ,(2000) , 10.1063/1.1332827
C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Lu, M. Wraback, H. Shen, Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition Journal of Applied Physics. ,vol. 85, pp. 2595- 2602 ,(1999) , 10.1063/1.369577
J.M. Shannon, Control of Schottky barrier height using highly doped surface layers Solid-state Electronics. ,vol. 19, pp. 537- 543 ,(1976) , 10.1016/0038-1101(76)90019-8
R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, K. A. Jones, Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices Applied Physics Letters. ,vol. 73, pp. 348- 350 ,(1998) , 10.1063/1.121830