作者: R.B Vasiliev , M.N Rumyantseva , N.V Yakovlev , A.M Gaskov
DOI: 10.1016/S0925-4005(98)00235-4
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摘要: Abstract CuO/SnO2 heterostructures as well SnO2(CuO) polycrystalline films have been studied for H2S sensing. Gas sensing properties of these materials compared in conditions: 25–300 ppm N2 at 100–250°C. A shorter response time the to that has found. It is suggested improvement dynamic sensor SnO2/CuO caused by localization electrical barrier between CuO and SnO2 layers.