Dielectric function and optical properties of quaternary AlInGaN alloys
作者： E. Sakalauskas , B. Reuters , L. Rahimzadeh Khoshroo , H. Kalisch , M. Heuken
DOI: 10.1063/1.3603015
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摘要: The optical properties of quaternary Alx Iny Ga1-x-yN alloy films with 0.16< x<0.64 and 0.02< y<0.13 are presented. (0001)-oriented AlInGaN layers were grown by metal-organic vapor phase epitaxy on thick GaN/sapphire templates. High-resolution x-ray diffraction measurements revealed the pseudomorphic growth GaN buffer. Rutherford backscattering wavelength-dispersive spectroscopy analysis used in order to determine composition alloys. ordinary dielectric function (DF) samples was determined range 1–10 eV spectroscopic ellipsometry (SE) at room temperature (synchrotron radiation: BESSY II). sharp onset imaginary part DF defines direct absorption edge At higher photon energies, pronounced peaks observed indicating a promising quality material. These features correlated critical points band structure (van Hove singularities). An analytica...
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