Semiconductor electroluminescent device with a multiple-quantum well layer formed therein
作者： Takeshi Kitatani , Takashi Shiota , Mitsuhiro Sawada , Atsushi Nakamura , Toshihiko Fukamachi
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摘要: Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or InGaAsP-based strain and barrier which high-performance highly reliable in wide temperature range. In multiple-quantum of the device, magnitude interface at between smaller than critical determined by thickness value larger one layer.
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