作者: Sergey Velichko , Gennadiy Agranov
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摘要: An imaging system may include an image sensor having front side illuminated near infrared pixels. Each pixel be formed in a graded epitaxial substrate layer such as p-type or n-type on layer. separated from adjacent by isolation trench the A deep p-well within each trench. The trenches and photodiodes for pixels have increasing concentration of dopants that increases toward backside sensor.