n-n Semiconductor heterojunctions

作者: W.G. Oldham , A.G. Milnes

DOI: 10.1016/0038-1101(63)90005-4

关键词:

摘要: … if the junction is sufficiently abrupt. Such structures are potentially very fast, because only majority-carrier transport is involved. InPGaAs nn junctions … that these junctions are indeed nn …

参考文章(9)
J. C. Marinace, Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs [Letter to the Editor] Ibm Journal of Research and Development. ,vol. 4, pp. 280- 282 ,(1960) , 10.1147/RD.43.0280
F. G. Allen, G. W. Gobeli, Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon Physical Review. ,vol. 127, pp. 150- 158 ,(1962) , 10.1103/PHYSREV.127.150
J. C. Marinace, Epitaxial vapor growth of Ge single crystals in a closed-cycle process Ibm Journal of Research and Development. ,vol. 4, pp. 248- 255 ,(1960) , 10.1147/RD.43.0248
D. Haneman, Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germanium Journal of Physics and Chemistry of Solids. ,vol. 11, pp. 205- 214 ,(1959) , 10.1016/0022-3697(59)90215-X
John Bardeen, Surface States and Rectification at a Metal Semi-Conductor Contact Physical Review. ,vol. 71, pp. 717- 727 ,(1947) , 10.1103/PHYSREV.71.717
M. Gershenzon, R. M. Mikulyak, Electroluminescence at p‐n Junctions in Gallium Phosphide Journal of Applied Physics. ,vol. 32, pp. 1338- 1348 ,(1961) , 10.1063/1.1736232
R.L. Anderson, Experiments on Ge-GaAs heterojunctions Solid-State Electronics. ,vol. 5, pp. 341- 351 ,(1962) , 10.1016/0038-1101(62)90115-6