X-Ray Stress Measurements of Single Crystal in Local Area Using Synchrotron Radiation.

摘要: X-ray stress measurements in a local area of single crystal silicon were carried out using synchrotron radiation. In the experiment, beam line 3A (BL3A) Photon Factory High Energy Accelerator Research Organization, Tsukuba, Japan, was utilized. The χψ-oscillation method used as oscillation specimen for detecting perfect diffraction profile. case radiation, wavelength can be selected monochromater so that angle may become high where highly-accurate strain measurement is possible. Therefore, accuracy improved more than characteristic X-rays. stresses three steps applied on four-point bending device. angles different planes measured each step φ50μm collimator, and calculated from peak shift. agreed well with evaluated gage. Also, distribution near edge circular hole diameter 400μm which made φ30μm collimator. device, at five points to 240μm. distributions FEM result. However it necessary size decreased order obtain accurately.