STRUCTURAL AND LIGHT-EMITTING PROPERTIES OF ULTRA THIN ANODIC SILICON FILMS FORMED AT THE EARLY STAGES OF BULK SILICON ANODIZATION

作者: S. GARDELIS , A. G. NASSIOPOULOU , I. TSIAOUSSIS , N. FRAGIS

DOI: 10.1142/9789812770950_0041

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摘要: We review our results on the structural and light-emitting properties of ultra-thin anodic silicon films grown by electrochemical dissolution bulk monocrystalline at early stages anodization. The were using monopulses anodization current covering range from regime porous formation to electropolishing. samples characterized high resolution transmission electron microscopy, Fourier transform infrared absorption spectroscopy photoluminescence.

参考文章(1)
R. J. Martín-Palma, L. Pascual, A. Landa, P. Herrero, J. M. Martínez-Duart, High-resolution transmission electron microscopic analysis of porous silicon∕silicon interface Applied Physics Letters. ,vol. 85, pp. 2517- 2519 ,(2004) , 10.1063/1.1797558