Advanced III–V nanowire growth toward large-scale integration
作者： X. Dai , A. Olivier , C. Wilhelm , S.A. Dayeh , C. Soci
DOI: 10.1016/B978-1-78242-253-2.00003-7
关键词:
摘要: Abstract We summarize the synthesis of group III–V semiconductor nanowires (NWs) (arsenides, phosphides, and antimonides) via various mechanisms methods. Advances in understanding bottom-up growth enable a precise control crystalline structure, doping, heterojunction formation, heteroepitaxial growth, facilitating implementation NWs into both individual-NW large-scale functional systems. With growing demand device performance enhancement downscaling, open up new range possibilities engineering investigating NW-based electronic photonic elements beyond conventional advantages materials like high carrier mobility versatility bandgap engineering.
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