Novel ESD protection scheme for core devices
作者： Yi-Hsun Wu , Jian-Hsing Lee
DOI:
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摘要: A circuit and a method for solving the general problem of protecting core devices in integrated circuits from electrostatic discharge damage is provided. This prevents ESD voltage breakdown thin oxide field effect transistors which are directly connected to Vdd power supply. The embodiments this invention use inverter buffers using thick or at input circuitry be protected. Other pass transistor transfer gates made with
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