Led element with a thin-layer semiconductor element made of gallium nitride
作者： Stefan Tasch
DOI:
关键词:
摘要: The invention relates to an LED module comprising chip (1), with active gallium nitride layer (2) and a silicon platform (3) on which the is arranged, wherein has two electrodes (4a, 4b) side (3b) facing away from (1)which are electrically connected (1) thickness of between 2 10 μm, preferably 1 5 μm.
lens.org 参考文章(15)
Hsing Chen, Packaging of light-emitting diode ,(2001)
Chil Keun Park, Yu Ho Won, Ki Chang Song, Geun Ho Kim, Sub-mount for mounting light emitting diode and light emitting diode package ,(2006)
Schang-jing Hon, Cheng Ta Kuo, T. P. Chen, M. H. Hsieh, High-power GaN LED chip with low thermal resistance Proceedings of SPIE, the International Society for Optical Engineering. ,vol. 6894, pp. 689411- ,(2008) , 10.1117/12.768595
Yoshiaki Yasuda, Kazuhiko Ueno, Masanao Tani, Led and fabrication method of same ,(2005)
Manfred Mundbrod-Vangerow, Ulrich Jacob, Berthold Hahn, Hans-Jürgen Lugauer, LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME ,(2001)
Michael R. Krames, Paul S. Martin, John Edward Epler, Package-integrated thin film LED ,(2006)
Nicholas W. Medendorp, James Ibbetson, Microscale optoelectronic device packages ,(2007)
Volker Härle, Berthold Hahn, Stefan Bader, Hans-Jurgen Lugauer, Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component ,(2003)
Yasuyuki Yamamoto, Masakatsu Maeda, Package for housing light-emitting element and method for manufacturing package for housing light-emitting element ,(2005)