Printed transistor and fabrication method

作者: Qinghuang Lin , Minhua Lu , Robert L. Wisnieff

DOI:

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摘要: A method for fabricating a thin film transistor includes printing source, drain and channel regions on passivated transparent substrate, forming gate dielectric over the region conductor dielectric. permanent antireflective coating is deposited source region, electrode, an interlevel layer formed coating. Openings in are to provide contact holes electrode. electrically connect Thin devices other methods also disclosed.

参考文章(105)
Theodore W. Keller, Robert H. Bickley, John Bjornholt, Transponding tag and method ,(1993)
David Lee, Kuang-Chih Wang, Water Lur, Ming-Sheng Yang, Air gap for tungsten/aluminum plug applications ,(2002)
Robert M. Geffken, William T. Motsiff, Adjustable self-aligned air gap dielectric for low capacitance wiring ,(2004)
Terry A. Spooner, Qinghuang Lin, Sampath Purushothaman, Shawn M. Walsh, Shyng-Tsong Chen, Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same ,(2009)
Kristy A. Campbell, John Moore, Joseph F. Brooks, Structure for amorphous carbon based non-volatile memory ,(2006)
Maxime Darnon, Qinghuang Lin, Jeffrey P. Gambino, Elbert E. Huang, Interconnect structure fabricated without dry plasma etch processing ,(2009)