Memory device with MOS transistors having bodies biased by temperature-compensated voltage
作者： Patrick J. Mullarkey
DOI:
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摘要: A memory device includes a plurality of PMOS transistors and voltage regulator circuit. Each transistor has gate, source region, drain well containing the regions. is characterized by threshold which dependent on temperature body-source bias voltage. also sub-threshold current transistor's The circuit operatively coupled to each provide well. temperature-compensates maintain approximately constant despite changes in temperature. thus advantageously relatively stand-by variations.
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